Husain (2016) Pengaruh Doping Atom Ga Dan As Terhadap Sifat Elektronik Germanene Dan Germanene Terhidrogenasi Dengan Pendekatan Density Functional Theory (Dft). Sarjana thesis, Universitas Brawijaya.
Abstract
Galium memiliki 3 elektron bebas sering digunakan untuk doping pada semikonduktor tipe-p, dan As memiliki 5 elektron bebas sering digunakan untuk doping pada semikonduktor tipe-n. Penyerapan hidrogen menyebabkan pita energi terbuka pada germanene dikarenakan transisi dari hibridisasi sp2 menuju sp3 dari atom Ge. Pengaruh doping atom Galium dan Arsenik terhadap struktur dan sifat elektronik germanene dan germanene hidrogenasi dihitung dengan pendekatan density functional theory (DFT). Dari perhitungan pita energi germanene murni tampak tidak memiliki celah energi (zero bandgap) sedangkan pada germanene terhidrogenasi memiliki celah energi direct gap sebesar 0,8 eV. Germanene terhidrogenesasi didop dengan atom Ga pada posisi B-site, H-site, dan T-site bersifat semikonduktor dengan jenis indirect gap dengan nilai pita energi sebesar 0,63 eV, 0,9 eV, dan 0,83 eV berturut-turut, sedangkan pada germanene terhidrogenasi didop dengan atom Ga pada posisi S-site bersifat semikonduktor dengan jenis direct gap dengan nilai pita energi sebesar 1,31 eV. Germanene terhidrogenesasi didop dengan atom As pada posisi B-site, T-site bersifat semikonduktor dengan jenis indirect gap dengan nilai pita energi sebesar 0,44 eV dan 0,9 eV, berturut-turut, sedangkan pada posisi H-site, dan S-site bersifat semikonduktor dengan jenis inderect gap dengan nilai pita energi sebesar 1,2 eV, dan 0,68 eV.
English Abstract
Gallium has 3 free electrons were often used for doping in the p-type semiconductor, and has 5 free electrons As was often used for doping n-type semiconductor. Hydrogen absorption caused energy band open on germanene due to the transition of sp2 to sp3 hybridization of Ge atoms. Effect of Gallium and Arsenic doping atom on the structure and electronic properties hydrogeneted germanene and calculated approach to density functional theory (DFT). From the calculation of the energy bands of pure germanene not seem to has an energy gap (zero bandgap), while on hydrogeneted germanene has a direct energy gap gap of 0.8 eV. Hydrogeneted germanene were doped with Ga atom at position B-site, H-site, and T-site is a semiconductor with a kind of indirect gap with band gap value of 0.63 eV, 0.9 eV, and 1.83 eV respectively, whereas in hydrogeneted germanene was doped with Ga atom at position S-site direct gap type was semiconductors with energy band gap value of 1,31 eV. Hydrogeneted germanene As didop atom at position B-site, and T-site are semiconductor with a kind of direct gap with band gap value of 0.44 eV and 0,9 eV, respectively, whereas in hydrogenated germnanene was doped As atom at position of the H-site, and S- site is a semiconductor with a kind indirect gap with band gap value of 1.2 eV, and 0.68 eV.
| Item Type: | Thesis (Sarjana) |
|---|---|
| Identification Number: | SKR/MIPA/2016/508/ 051610446 |
| Subjects: | 500 Natural sciences and mathematics > 530 Physics |
| Divisions: | Fakultas Matematika dan Ilmu Pengetahuan Alam > Fisika |
| Depositing User: | Kustati |
| Date Deposited: | 26 Oct 2016 08:55 |
| Last Modified: | 26 Oct 2016 08:55 |
| URI: | http://repository.ub.ac.id/id/eprint/155051 |
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